Sony Corporation has announced the development of a 35mm full size (diagonal: 43.3mm/Type 2.7) 24.81 effective megapixel, ultra-high speed high image quality CMOS image sensor designed to meet the increasing requirement for rapid image capture and advanced picture quality within digital SLR cameras.

 

January 31, 2008: Sony Corporation has announced the development of a 35mm full size (diagonal: 43.3mm/Type 2.7) 24.81 effective megapixel, ultra-high speed high image quality CMOS image sensor designed to meet the increasing requirement for rapid image capture and advanced picture quality within digital SLR cameras.
The new sensor chip combines special circuit design technology and uses advanced fabrication techniques, such as planarisation for minimising fluctuations. Sony’s “Column-Parallel A/D Conversion Technique” also provides each column within the sensor with its own 12-bit A/D converter, minimising image degradation caused by the noise that arises during analog processing while at the same time delivering an extremely high signal conversion speed. Photosite cell size is 5.94 microns square.
The enhanced image quality generated by the sensor’s 24.81 effective megapixel resolution, wide range of graduation achieved by its full size broad dynamic range, and the low noise, high resolution, ultra-responsive performance provided by Sony’s Column-Parallel A/D Conversion technique enable it to meet the ever-increasing requirements within high performance digital SLR cameras. In all-pixel scan mode, the chip is capable of supporting 6.3 frames/second bursts. Sony plans to mass produce this CMOS image sensor within this year.

FOOTNOTE: A “flagship” DSLR camera that uses this sensor is scheduled for release by the end of 2008. The as-yet-unnamed camera will include Super SteadyShot Inside sensor-shift image stabilisation that is specially designed for the full-frame imager. An optional vertical grip and flash accessories are being developed for the new camera.